Session Index

S1. Nanophotonic Materials and Devices

Nanophotonic Materials and Devices III
Saturday, Dec. 3, 2022  10:45-12:00
Presider: Ming-Lun Tseng、Yuh-Shing Chou
Room: B1 A003
10:45 - 11:15
Manuscript ID.  0885
Paper No.  2022-SAT-S0103-I001
Invited Speaker:
Tien-Chang Lu
Active modulation of ZnO plasmonic nanolasers on the graphene-insulator-metal platform
Tien-Chang Lu, National Yang Ming Chiao Tung University (Taiwan)

We demonstrate the active modulation of the ZnO nanowire plasmonic nanolaser on the graphene-insulator-metal (GIM) platform at room temperature. With the gate voltage supported by the GIM structure, the accumulation of the charge concentration in graphene or metal depends on the positive or negative gate bias, changing its intrinsic optical properties and affecting the oscillation of the surface plasmon polariton (SPP) mode. Consequently, the lasing threshold of the ZnO nanowire plasmonic nanolaser can be modulated by applying the gate voltage. When the applied gate voltage was tuned from +6 V to -6V, the threshold power of the ZnO nanowire plasmonic nanolaser with a 7-nm-thick Al2O3 layer increased as high as 6.5-fold, which is a significant change and stands for an extraordinary modulation performance. Additionally, after the repeatability measurement, the ZnO nanowire plasmonic nanolaser also exhibited robustness for gate modulation, which benefits it to realize a stable room-temperature operation. Furthermore, by calculating the turn-on dynamics and small-signal frequency response, the modulation speed of the ZnO nanowire plasmonic nanolaser can reach a few THz regions on the GIM platform. Such high-speed modulation makes the ZnO nanowire plasmonic nanolaser show great potential for integrating the laser and optical modulation in the on-chip plasmonic circuit and improving the operation speed.

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11:15 - 11:30
Manuscript ID.  0087
Paper No.  2022-SAT-S0103-O001
Jia-Zheng Lin Monolithic GeSn p-i-n Photodetectors on Silicon for Full Short-Wave Infrared Detection
Meng-Hsien Chou, Jia-Zheng Lin, Yue-Tong Jheng, Po-Chiao Wang, Guo-En Chang, National Chung Cheng University (Taiwan)

We present normal-incidence GeSn p-i-n short-wave infrared (SWIR) photodetectors monolithically integrated on silicon substrates. By increasing the Sn content to 11%, the photodetection range is extended to 2675 nm at room-temperature to fully cover the entire SWIR range.

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11:30 - 11:45
Manuscript ID.  0026
Paper No.  2022-SAT-S0103-O002
Cheng-Ching Li 4f Interference for Building Scaling Laws of Perovskite Nanolasers
Cheng-Ching Li, Zhen-Ting Huang, Tien-Chang Lu, National Yang Ming Chiao Tung University (Taiwan)

We exploited a series of meticulous approaches including 4f interference measurement to obtain the precise lasing characteristics of perovskite nanolasers and identify the proper resonance mode to establish the scaling law. For the first time, the limitation of optical diffraction in near-field observation for plasmonic nanocavities has been manifested.

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11:45 - 12:00
Manuscript ID.  0086
Paper No.  2022-SAT-S0103-O003
Bo-Rui Wu Optically-Pumped GeSn Waveguide Lasers on Silicon
Chen-Wei Wu, Yi-Wei Peng, Yue-Tong Jheng, Bo-Rui Wu, Lung-Yi Hsu, Guo-En Chang, National Chung Cheng University (Taiwan)

We report on all-group-IV optically-pumped GeSn lasers on silicon for mid-infrared silicon photonics. High-Sn-content GeSn active layer was grown on silicon substrate to realize direct-bandgap. Lasing action was achieved with a lasing wavelength up to 310 nm and temperature up to 200 K.

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