Session Index

The wide bandgap semiconductors ZnGa2O4 and Ga2O3 were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). For the epilayers growth, the flow rate of metalorganic (Mo) source and growth temperature were variated, while the flow rates of O2 were fixed at 1000 sccm, respectively. The effect of Mo flow rate on the structural, cathodoluminescence (CL), and optoelectronic properties of wide bandgap semiconductors were analyzed. The photodetector, x-ray photodetectors, power devices applications will also be discussed in this talk.

  Preview abstract

Nowadays, many vertically stacked 2D layered devices are still fabricated as heterostructures and heterojunctions because of the lack of van der Waals stacked p-n homojunction. p-ReSe2 is successfully synthesized by doping 20% amount of Chromium substituting Re- site. A p-n homojunction light-emitting diode made by stacking multilayered n-ReSe2 (Cr 0%) and p-ReSe2 (Cr 20%) is first fabricated, and it emits an electroluminescence of ~946 nm from the band edge. Another p-n homojunction solar cell is also manufactured to exhibit a maximum axial conversion efficiency of η≈1.05% along with the b-axis polarization of ReSe2.

  Preview abstract

AlOx passivation layers on the rear sides of silicon PERC solar cells are formed by thermally oxidizing 3 nm thick aluminum films deposited in advance by an e-gun evaporator. The oxidation process is conducted in a furnace full of oxygen at 400 oC for 10 minutes, followed by an annealing at 700 oC , and then the stacking of films on the back surfaces. After that, a second annealing process is done at 400 oC to repair the defects resulting from the bombardment of ions on the passivation layer.

  Preview abstract

The purpose of our research is the development of metal mesh-based flexible transparent electrodes with submicron line width. It is required for the future advance of touch panels to develop next-generation of transparent electrodes with low resistance and flexibility to replace ITO. In this research, blue laser was locally irradiated to silver nitrate mixed polymer, and silver lines were fabricated by laser reduction reaction. We will present the resistivity dependence of the fabricated silver line on the laser irradiation and the fabrication results of metal mesh-based transparent conducting electrode.

  Preview abstract

This study simulated particle trajectories in RF-ICP ion source. A 2D model of the ion source was built in COMSOL Multiphysics®, and the 3D grid was simplified to a 2D forms. In this model, it was assumed the electron and ion densities are nearly uniform. We use the density distribution to describe the spatial distribution of ions within the plasma sheath. According to the simulation of the plasma results, the ion distributions were release in sheath. The ion beam trajectories were investigated different sheath forms. Beam energy changed the ion density distribution of the ion source.

  Preview abstract

Though organic-inorganic hybrid perovskites have high photoelectric conversion efficiency, their instability to environment hinders their commercialization. In this study, MAPbI3, MAPbI3-xBrx with UV light-induced degradation are conducted, then XPS system equipped with ultraviolet photoelectron spectroscopy (UPS) and low-energy inverse photoemission spectroscopy (LEIPS) were used to exam the elemental composition, chemical state as well as the change of the energy band gap (Eg). The results show that band gap is found bigger after UV treatment. Via this novel surface analysis techniques, the n/p type of semiconductors could be determined, so this analysis technology is suitable for investigating next-generation semiconductor devices.

  Preview abstract

A bias voltage has been applied to the substrate to fabricate the c-axis-aligned-crystalline indium-gallium-zinc-oxide (CAAC-IGZO) thin film by using magnetron sputtering. The crystallization was improved by applying a positive bias on the substrate during the process. X-ray diffraction (XRD) was used to analyze the quality of crystallization. After calculating the FWHM, intensity and diffraction angle of XRD, the best crystallinity is at 75 V of the applied substrate bias.

  Preview abstract

In this work, a self-powered integrated energy storage system constructed by perovskite solar cells and supercapacitors had been developed. The device was charged to 0.76 V in 40.6 s under AM1.5G solar simulator illumination. Besides, the overall conversion
efficiency of the device was 7.33 %.

  Preview abstract

The pulse-wave modulation plasma with fixed CO2/SiH4 gas flow ratio and changed RF power were used to separately deposit high energy gap (Eg) barrier layer (B) (a-SiOx:H) thin film, low Eg well layer (W) (a-SiOy:H) thin film and B/W superlattice (a-SiOx:H/a-SiOy:H) film. The structural and optical properties of B, W thin films and B/W superlattice thin films were investigated.

  Preview abstract

Vanadium oxide thin films were deposited on silicon and glass substrates using an electron gun evaporation and ion-beam assistance deposition. The optical and mechanical properties of vanadium oxide thin films prepared by different argon flow rates were discussed. The results show that the compressive residual stress of vanadium oxide film decreases with the increase of argon flow rate. In addition, the root-mean-square surface roughness of the vanadium oxide films gradually increased with the increase of the argon flow rate.

  Preview abstract

Thin copper film (15 nm) was deposited on a bi-layer MoS2 surface by using the electron beam deposition. With the assist of the van der Waals epitaxial growth mode on 2D material surfaces, the Cu thin film exhibits preferential planar growth at room temperature, which will lead to the formation of polycrystalline and continuous Cu thin films on MoS2 surfaces. Compared with the Cu film deposited on SiO2 surfaces, a significant low resistivity 4.71 μΩ-cm is obtained on MoS2 surfaces. The planar growth of Cu on 2D material surfaces will lead to the practical applications of backend metal interconnects.

  Preview abstract

In order to improve the efficiency of heterojunction solar cells, we try to increase the light absorption ability of the element by reducing the reflectivity of the light entering the substrate. We simulate and design an inverted pyramidal structure texture with a period of 1μm, an opening size of 900nm, and a vertical depth of 620nm. And we use this structure with the HIT element. Preliminary results show that the inverse pyramid achieves a pseudo power conversion efficiency (pη) of 12.4% and a SunsVoc of 548mV.

  Preview abstract

The sp2 bonded boron nitride film has excellent thermal conductivity and insulating properties. In this study, sp2 bonded boron nitride films were grown on silicon (111) substrates on Low-Pressure Chemical Vapor Deposition system with ammonia borane as the precursor. Raman spectrometer and spectrometer were used to measure and analyze sp2 bonded boron nitride films at different distance from the precursor, and to analyze the film quality and growth characteristics.

  Preview abstract

In this research, we use 2D RCWA and 2D-finite-element method Poisson and drift-diffusion solver to simulate the optical and electrical properties of perovskite/silicon tandem solar cells(TSCs), respectively, to find the optimal textured structure and power conversion
efficiency of TSCs. Compared with the planar structure, the texture structure can reduce the reflected photocurrent from 4.605mA/cm^2 to 1.984mA/cm^2. And the matched photocurrent of the top cell and the bottom cell will increase from 18.04 mA/cm^2 to 20.27 mA/cm^2. Indicates that the texture structure can effectively improve Jsc by reducing the reflected photocurrent. The power conversion efficiency(PCE) can improve from 21.47% to 28.64%.

  Preview abstract

​In this talk, the first part, the study of in-situ cleaning and selective functionalization of 2D layered material, where the selective functionalization and passivation not only enhanced stability in the air but also highly improve the electrical properties of field-effect transistor (FET), with the high on-current and enhanced carrier mobility and on/off ratio. Also, the BP as functional active layers for artificial synapse memristors will be demonstrated. In the second part, I will introduce the efficient and reliable method for the transferring of graphene and other 2D materials with higher integrity and ultraclean surface, which is beneficial for the following BEOL device integration.

  Preview abstract

MoS2 has been widely studied as a next-generation semiconductor channel material for electronic and optoelectronic devices due to its excellent properties. We applied the CVD method with the addition of the promoter sodium chloride to grow large-area MoS2 films at argon flow rate of 10 sccm and a sulfidation temperature of 650 °C. Raman spectroscopy and photoluminescence spectroscopy has confirmed that the MoS2 film is monolayer and homogeneous.

  Preview abstract

The electronic properties of MAPbI3 perovskite nanoflakes are investigated. Owing to the quantum confinement effect, the thinner the perovskite nanoflake, the larger the energy bandgap. The photocurrent of the perovskite nanoflake is positively correlated to the illumination intensity. Field-effect transistors based on perovskite nanoflakes exhibit p-type characteristics. A smaller transfer hysteresis and larger threshold voltage are observed in the transistor with a thinner perovskite nanoflake as the channel.

  Preview abstract

By using chemical vapor deposition, high quality Bi2Se3 thin films is obtained. The thin films were investigated by XPS, XRD and SEM. The result showed that the thin films’ typical thickness are from 1.3 um to 0.3um and the material analysis indicated high agreement of material chemical bonding and crystal structure with Bi2Se3 single crystal.

  Preview abstract

By using graphene as the channel and MoS2 as the absorption layer, high responsivity values can be observed from the MoS2/graphene bottom-gate photo-transistors. Compared with the standalone mono-layer MoS2 photo-transistor, five orders of magnitude enhancement in the responsivity value is observed for the MoS2/graphene device. The results have demonstrated that besides the reduction in the contact resistance at the electrode/2D material interface, the easy carrier transport between 2D material layers of MoS2 and graphene is also the main mechanism responsible for the high responsivity of the MoS2/graphene photo-transistor.

  Preview abstract

The quality of monocrystalline germanium thin film has been influenced by bias voltage in this research. XRD and Raman were used to measure the crystal intensity and FWHM. AFM and SEM were used to measure the film quality. The bias voltage made good impact within a certain range.

  Preview abstract

InGaN micro light-emitting diode (LED) with a current confinement structure and a bottom porous-GaN distributed Bragg reflector (DBRs) has been demonstrated. The aperture emission regions were observed by forming the lateral oxidized GaOx layer surrounding the mesa region. Two micro-LED structure was lighting through the interconnected metal on the insulated GaOx layer. The directional emission properties of the InGaN micro-LEDs were observed by forming the resonant-cavity structure and the current-confinement aperture region.

  Preview abstract

In this study, plasma-assisted atomic layer deposition method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma at 60ºC. The measurae crystallization by XRD, from 2556.09 to 1.2 when the inhibitor layer is added to the film. The surface of the film measurae by AFM, roughness decreases from 1.25 nm to 0.434 nm. lasts 56 hours when tested at 85°C and 85% humidity; however add the inhibitory layer has a lifespan of around 352 hours.

  Preview abstract

The slope of merit function resolved the accuracy of stopping criteria for broadband optical monitoring by plasma-assisted reactive magnetron sputtering. A fourteenth layers bandpass filter was used to verify the proposed method in this system. The method used the slope of merit function as a criterion for terminating deposition to control each layer's optical thickness.

  Preview abstract

Industry uses Metal-organic Chemical Vapor Deposition and Molecular Beam Epitaxy to epitaxial Gallium Nitride thin films, but these two methods used more than 1000℃.Considering the coefficient of thermal expansion will lead to substrates produce cracks and warpage, moreover MOCVD and MBE used toxic gases and low depositing rate. Therefore, we used sputter and Ga target avoid using toxic gases. By High Power Impulse Magnetron Sputtering increasing deposition rate and providing high energy density plasma broken atoms, which are participating in the reaction. Grown GaN on Silicon substrate in 500℃ change On time, Duty cycle, gas flow and bias voltage.

  Preview abstract

This work demonstrates a design strategy to improve the ideality factor of the fully room-temperature-fabricated SnOx-based p-n junction diodes. Despite its relatively good rectification, this diode exhibits an ideality factor of 22.3, which deviates considerably from the ideal diode. By correlating the optical and electrical properties of the films resulting from Hall and absorption measurements with numerical drift-diffusion simulations, we find that the poor ideality factor corresponds to the presence of an intermediate-phase layer between the p-type and n-type layers. We show that reducing the thickness of the interface layer is able to lower the ideality factor to 3.6.

  Preview abstract

In this study, tin dioxide (SnO2) thin film and multilayer anti-reflection thin films were coated on D-shaped multimode fiber to fabricate a high-sensitivity thin-film-based optical fiber pressure sensor. This pressure sensor is used to measure the pressure of weights of different masses. When the pressure increases, the coupling conditions change and result in the loss mode resonance (LMR) wavelength shift. Finally, we use this wavelength drift mechanism to obtain the sensitivity of fiber optic pressure sensor. The sensitivity of 0.05 nm/g is achieved.

  Preview abstract

This paper presented a new thin film thickness measurement platform based on optical interference phenomena on thin films. A V-shaped structure and a miniature spectrometer are used to reduce the size of the measurement platform. The thickness of the wafer coated with photoresist was measured separately using the ellipsometer and the measurement platform developed in this study, and the error of the measurement results was about 3.45%.

  Preview abstract

We utilize a polymer and self-assembled monolayers to create a self-adaptive transport layer (SATL) for high-performance perovskite photovoltaics. The device exhibits high power conversion efficiencies (PCEs) of 19.63% under 1 sun standard illumination sunlight and a PCE of 33.54% under indoor light at 200 lux. This indoor PCE can match the current best record indoor efficiency for inverted perovskite devices.

  Preview abstract

Here, we introduce fluorine functionalized graphene (FGr) layers with fine-tuned energy level as hole transport layers (HTLs) to improve high PCE and stability of inverted perovskite solar cells (PSCs). Non-wetting surface of FGr assisted to enhnace the crystallinity of Organic-inorganic trihalide perovskite (OTP) films with large aspect ratios than of PEDOT:PSS. Combining of High work-fucntion of HTLs interface, the enhnaced crystallinity and limited grian boundary area dramatically decreased the charge recombination losses in OTP films. Thus as FGr HTL for inverted PSCs, the best PCE reaches 19.37 %. Besides, the FGr HTL exhibits promising potential for application in flexible PSCs.

  Preview abstract

We study exciton-photon coupling and emission in polymer microcavities with poly(1,4-phenylenevinylene) derivative, Super Yellow (SY). With a sufficient thick SY film, we observe the generation of ultrastrong coupling with a Rabi splitting energy of ~1 eV and also an intense narrow-band polariton emission along a flat LP mode dispersion by radiative pumping. In an optimal cavity with matched LP low-energy states and exciton emission peak, the highest conversion efficiency of ~80% from bare exciton emission into polariton mode emission is achieved.

  Preview abstract

The metallic silver coating for optical telescopes can achieve high reflection from the visible to infrared spectrum. This kind of protective silver coating has been developed in our related publications. The environmental tests demonstrated that the proposed Ag film has high reflection, adhesion, and sulfurization resistance. In order to discover the material characteristics, the upper and lower layer of the Ag thin films were analyzed by X-ray photoelectron spectroscopy (XPS). The results show that the bonding forces in these three layers are strong and capable of passing the adhesion test regarded to the adhesive regulation of ASTM D3359.

  Preview abstract

We develop four machine learning (ML) models which adopt the chemical structures of the donor and acceptor in bulk heterojunction organic photovoltaics (OPVs) as the features for predicting their power conservation efficiencies (PCEs) under artificial lighting conditions. Three different fingerprints are used to describe the structural features and chemical information of the active materials in OPVs. The accuracy of the ML models is improved after combining the chemical information from both donors and acceptors; the average values of the prediction accuracy estimated from cross-validation of the four models are more than 70%.The best accuracy (R2) of 0.77 can be achieved.

  Preview abstract

The Al2O3 deposited by ALD has already adopted in commercial Si solar cells. We have found that existence of native oxide before Al2O3 deposition is beneficial for lifetime after FGA but deleterious for higher temperature treatment, However, such high temperature simulated by rapid thermal annealing (RTA) cannot be avoided due to the commercial metallization. We also investigated the influence on lifetime evolution for samples with Al2O3 deposited at different temperatures. The deposition temperature at 300°C has a better lifetime performance after RTA than that at 200°C.

  Preview abstract

The conversion efficiency of InGaP/GaAs/Ge triple-junction solar cell (3J-SC) is significantly improved due to indium nanoparticles (In-NPs) sheet embedded in TiO2 anti-reflective layer with a thickness of 52 nm. The distance between In-NPs sheet and 3J-SC of plasmonics effect on the conversion efficiency was investigated. The In-NPs sheet 10 nm away from the surface of 3J-SC had the lowest weighted average reflectance as well as the highest conversion efficiency enhancement of 33.39 %, due to near-field plasmonic effects.

  Preview abstract

The photovoltaic performances of perovskite solar cells (PCE)were studied using
ZnO nanorods electron-transporting layer (ETL) which were prepared via chemical bath
deposition(CBD) method. These samples were characterized by FE-SEM, solar simulator
measurements and photoluminescence measurements to confirm ZnO nanorods microstructural and PSCs electrical properties by the different nanorod growth time.

  Preview abstract

In this study, we investigated the luminous properties of pure cesium iodide (CsI) and potassium-doped CsI (CsI:K) films deposited by thermal vacuum evaporation at 250°C. The deposited films were evaluated by XRD patterns, FESEM cross-section/surface morphologies and X-ray luminescence (XL). The broad-band luminescence demonstrates from ~400 to 420 nm. The CsI films co-evaporated by 0 to 2 wt.% KI showed preferred crystal orientation at (110) and (200) and the larger crystalline column structure of ~10 μm.

  Preview abstract

Abstract: In this study, vertical graphene sheets (VGSs) were directly synthesized by a Plasma Enhanced Chemical Vapor Deposition system and introduced into hole transport layer of perovskite-based photovoltaics. The best power conversion efficiency of NiOx:VGS device achieved 15.28%, which is higher than 14.13% of NiOx standard device without VGS doping. In addition, all electrical parameters were improved such as JSC from 19.32 mA/cm2 to 20.10 mA/cm2 and FF from 71.0 to 73.9% after VGS incorporation. All characteristics of VGS-doped NiOx were carefully investigated to explore the origin of improvements in devices.

  Preview abstract

High reflective metal optical thin film is fundamentally important for space optics. With regard to the spectrum from near-infrared to visible light, a silver thin film has a higher average reflection than an aluminum-coated optical mirror. A new silver thin film multilayer stack has been designed to achieve the characteristics of high reflections, adhesion, radiation resistance, and high-low cycling temperature. Since air pollution, volcanoes and humidity can exist sulfide to oxidize a silver film; this paper demonstrates that the proposed protective Ag film has sulfurization resistance if the silver mirrors are assembled, stored, and transported before launching to the sky.

  Preview abstract

Fabrication and characterization of heterojunction solar cells with a wide energy gap oxide thin film (TiO2) on p-silicon are demonstrated in this study. Different thicknesses of TiO2 thin film deposited on p-type Si substrate using RF-sputter and subsequently a thin aluminum film as the carriers collected electrode deposited upon TiO2 layer using e-beam evaporation are proposed and studied to achieve higher efficiency. The impressive conversion efficiency of 10.98% for the cell with an optimized thickness of 3 nm TiO2 was obtained in present work.

  Preview abstract

Precious metals have the potential to reshape the energy distribution of electrons as they absorb photons. In our study, n-type silicon is used as the substrate and combined with silver to form Schottky infrared detector. Using focus method to increase hot-carrier concentration and enhance the per unit power photoresponse of silicon-based Schottky photodetector in the mid-infrared region, the response is increased by 2.624 and 1.7914 times at the wavelength of 4.26um and 5.3um, respectively

  Preview abstract

High-length silver nanowires (AgNWs) were synthesized by polyol method, and then they were placed inside the PDMS for a stretchable memory electronic skin. However, the PDMS is modified with AgNWs has good transmittance of 77.4% during visible band, and it has good mechanical and electronic properties.

  Preview abstract

A thick Al2O3 passivation layer (~10-20 nm) is known to increase carrier lifetime and to reduce passivate intrinsic defects of photovoltaics. In this study, X-ray photoelectron spectroscopy (XPS) system was used to investigate the surface chemistry of the Al2O3 passivation layer and SiOx thin film with different annealing temperatures. The hard X-ray photoelectron spectroscopy (HAXPES) was used to confirm the chemical state of the SiOx thin films without removing Al2O3 layer. The angle-resolved HAXPES was used to reconstruct elemental depth profile without sputtering. The results show that higher SiOx intensity is obtained with increasing annealing temperatures.

  Preview abstract

The Al doped ZnO nanorods (AZO NRs) were grown by hydrothermal method and the cuprous oxide (Cu2O) was deposited on AZO NRs by electrochemical deposition. Then, Ag nanoparticles were modified the Cu2O/AZO NRs electrode by surface plasma enhanced. The high sensitivity of 221.6 μAmM-1cm-2 was measured for a non-enzymatic glucose-sensor.

  Preview abstract

In this paper, the effect of nanoscale deposition thickness on the residual stress of aluminum oxide nano-films was investigated. With the increase of the deposition thickness, the Al2O3 thin film prepared by atomic layer deposition (ALD) will change from the compressive stress state to the tensile stress state. When the thickness increases from 79 nm to 126 nm, it is found that the tensile stress value of the Al2O3 thin film tends to increase. This result is also consistent with the literature report.

  Preview abstract

In this work, a comprehensive study of tin monoxide (SnO) thin film transistor (TFT) was performed. In order to optimize SnO film, different approaches were investigated such as different O2/Ar ratio and post deposition annealing adjustments. With certain O2/Ar ratio, SnO TFT exhibited p-type electrical characteristics of high mobility of 0.58 cm^2/V∙s and on off current ratio (ION/IOFF) of 2.89E+02. To sum up, SnO TFT is very promising for applying to flat panel display technology.

  Preview abstract

P-type copper oxide (CuO-Cu2O)/n-type porous silicon (PSi) heterojunction was prepared by chemical bath deposition (CBD) on PSi that was fabricated by metal-assisted chemical etching (MACE) method. After 10 cycles CBD deposition, large numbers of flow-like copper oxide microstructures that grew and covered PS provides the photocatalytic activities. Using two-electrode photoelectrochemical (PEC) measurement, 15 cycles deposition is favorable to have better PEC performance of generating 0.1 mA photocurrents under applied potential of 1 V.

  Preview abstract

In this study, perovskite solar cells (PSCs) based on two organic cations with three different molar ratios are fabricated in a low humidity glove box by using two-step method. With the improvement of surface crystallization of perovskite layer, an optimal photoelectric conversion efficiency (PCE) of 12.08 % is achieved.

  Preview abstract

A simulation program combined with LabVIEW and Python optimization method to implement reverse engineering simulation of the multilayer spectrum was proposed in this study. After that, we would obtain the variation of the optical constant and thickness layer-by-layer.

  Preview abstract

The notch film with shadow-mask was used to design linear variable filter. A program was written to model and simulate the relative thickness of the Nb2O5-SiO2 composite films influenced by different target-substrate distance. Moreover, optimization of shadow-masks for Nb2O5-SiO2 composite films to achieve spatial variation in reflective‐band center wavelength across the substrate surface.

  Preview abstract

The vanadium dioxide based thin films with and without doping tungsten were deposited by reactive high-power impulse magnetron sputtering. The rutile titanium dioxide seed layer was used to assist growth monoclinic vanadium dioxide films. The crystalline quality and optical properties were investigated in detail using UV-VIS-NIR spectroscopy and X-ray diffractometer.

  Preview abstract

In recent years, the photovoltaic absorber material Cu2ZnSnSe4 (CZTSe) has attracted attention due to the earth-abundance of its constituents and non-toxic properties. Intrinsic defects in the absorber layer of CZTSe are considered to limit the open circuit voltage cannot be improved. Here Ag is used to replace Cu in CZTSe to control and passivate the defect states in bandgap of kesterite CZTSe. In this experiment, FTO substrates were used to prepare CZTSe and partially Ag-substituted ACZTSe films by selenization after evaporation. These samples were characterized by FE-SEM, UV-Vis, to confirm the structural and optical properties.

  Preview abstract

Using novel high-power pulsed magnetron sputtering to process IGZO can make the film have high density and adhesion. In this study, IGZO was deposited into the flexible substrate and the bending test was performed. By observing thin and flexible substrates, the properties of the film will gradually degrade or even be directly damaged as a result of several compression stress tests.

  Preview abstract

In this study, silicon nitride films were prepared by electron beam evaporation combined with ion deposition (IAD) technology. The effect of nitrogen flow rate on the optical and mechanical properties of silicon nitride films was investigated. When the process temperature is 170°C, the nitrogen flow rate is 2 sccm, the silicon nitride film has an average transmittance of 83.74% in the visible light range, a refractive index of 1.979, an extinction coefficient of 6.810-4, a compressive residual stress of 943 MPa and a surface roughness of 1.53 nm.

  Preview abstract

DUV short-wave-pass filters derived from reactive plasma ion assisted deposition of HfO2/SiO2 suppress solar background at wavelengths above 300 nm and maintain high DUV transmission between 260-290 nm. We obtained a transmittance of 93% in the DUV with blocking greater than 6 OD in the longer UV wavelengths. Surface morphology analysis and scatter estimation indicate that it is possible to enhance and extend the blocking region from the UV to VIS and even IR while still maintaining high transmittance in the DUV solar noise-free band.

  Preview abstract

In this work, a metasurface comprises subwavelength polymer grating with obliquely coating of silver is adopted as one reflection mirror in Fabry-Pérot cavity. The polarization dependent transmittance peaks are derived and compared with the traditional Fabry-Pérot cavity. It is found that the cavity with metasurface mirror is thinner than the traditional cavity because the reflection phase of the metasurface is different from that of a silver film.

  Preview abstract

We explored metal-silicon junction solar cells to absorb Infrared regime above 1100
nm using hot-carrier effect. The photovoltaic conversion efficiency of the solar cell can be
optimized via thermal annealing process. Besides, we analyzed the morphology of metal films
under different annealing temperatures via X-ray diffraction (XRD) and scanning electron
microscopy (SEM). The hot-carrier solar cells are achieved with a record efficiency of above
3%.

  Preview abstract

Pulse-wave modulation plasma with change the RF power was used to fabricate and control the structural and optical properties of hydrogenated amorphous a-Six:H/a-Siy:H superlattices films. The optical characteristics of single a-Six:H (barrier layer), a-Siy:H (well layer) and a-Six:H/a-Siy:H superlattices were investigated.

  Preview abstract

The manganese (Mn)-doped NiOx layer was prepared by sol-gel process to serve as the hole
transport layer (HTL) in inverted perovskite solar cells (PSCs). The perovskite film deposited on the
Mn-doped NiOx exhibited lower recombination and shorter carrier lifetime. The device based on 0.5
mol% Mn-doped NiOx HTL displayed the best power conversion efficiency (PCE) of 17.35% and a
high fill factor (FF) of 81%, which were significantly higher than the one using pristine NiOx HTL.
Moreover, the device retained 70% of its initial efficiency after 35 days storage under a halogen lamps
matrix exposure.


  Preview abstract

The performance of the metal halide-based perovskite is increasing at a rapid rate and
multi-junction solar cells have attracted immense attention in recent years. In this paper, we have
proposed a new technique (DS-SET) for the formation of mixed halide-based tunable bandgap
MAPbIxBr3-x perovskite thin film. The thin film characteristics show that by optimizing the SET
time, we can achieve a PCE (%) of 11.43% and Eg of 1.96 eV. Furthermore, the bandgap can be
tuned by changing in the SET time, which enables tandem solar cells with an efficiency above 26%.

  Preview abstract

In this work, gold was obliquely deposited upon the ridges of a subwavelength grating made of PDAP polymer. The morphology of gold depends on the morphology of deposited gold film. The TE polarized reflectance increases with wavelength and exhibits the property of a wire grid polarizer. The abnormal TM polarized reflectance peak was measured and found to be varied with the morphology of gold. The magnetic field reversal within the ridges was demonstrated with finite-difference time-domain simulation.


  Preview abstract

We discuss the effect of the perovskite film in different doping ratios of the cesium bromide (CsBr) and methylammonium bromide (MABr). Finally, the solar cell prepared with Cs0.15FA0.81MA0.04PbI2.86Br0.14 as the active layer has the best photovoltaic characteristics, and its PCE reaches 18.7%.

  Preview abstract

The WO3 doped TiO2 all-solid-state electrochromic devices were fabricated by co-sputtering with DC and RF plasma sources. The power of WO3 is 100W RF, then the doping power of TiO2 change from 10 to 50W by RF & DC. However, the transmittance variation (ΔT) of device can reach 68.3%@550nm.

  Preview abstract

Home-made phase-shifting interferometer constructed a measurement system that can quickly and accurately analyze the residual stress of silicon substrate. The wide-bandgap Semiconductor of AlN deposited on silicon substrate with high-energy magnetron sputtering and realize the relative principal anisotropic stress analysis of the axial and shear stresses by phase-shifting interferometer.

  Preview abstract

Light-addressable potentiometric sensor (LAPS) had been proven for pH sensing and 2D chemical imaging. Many semiconductor layers had been studied. Thin film semiconductor on glass can be a good candidate with simple process and industry compatibility. The first study of the illumination stability and thickness of semiconductor is proposed for the IGZO-based LAPS. Thinner IGZO layer can have a better stability with hysteresis width and drift of -12.8 mV and 0.37 mV/h, respectively.

  Preview abstract

The optical properties, thickness, and water contact angle of surface and interface layers between the polycarbonate (PC) and sputtered Ta2O5 films were investigated with spectrophotometer, spectroscopic ellipsometer, and contact angle measurement system, respectively. The surface of PC had been pretreated with low pressure oxygen plasma.

  Preview abstract

The optical properties and thickness of molybdenum trioxide thin films prepared by reactive DC magnetron sputtering were investigated with spectrophotometer and spectroscopic ellipsometer. The films were deposited under different O2/Ar flow rate ratios.

  Preview abstract

Compare (Ag, Cu)2ZnSnSe4(ACZTSe) thin film with Cu2ZnSnSe4 (CZTSe) thin film,the variety of thin film of absorber layer by Ag-doping is investigated. After Ag is doped into Cu2ZnSnSe4 thin film, the grain becomes compact, and the band gap of the absorber layer increases from 0.99 to 1. 06eV.

  Preview abstract

The Ga2O3 film was prepared on quartz and Si substrate respectively by spray pyrolysis with following high temperature annealing in atmosphere. The optical bandgap extracted from Tauc plot for quartz/Ga2O3 samples shows an increase-stabilized character at 4.7eV while anneal temperature excess 800oC. The In/p-Si/Ga2O3/Ag MOS diodes were fabricated for the annealed p-Si/Ga2O3 structure with following In and Ag contacts formation. With the flat band voltage shift and hysteresis loop characterized in CV analysis, trap charge in p-Si/Ga2O3 decreases after 600oC annealing process. The effect of high temperature annealing to the diode was discussed.

  Preview abstract

This paper aims to summary the standardization research of pivot SEMI standards about emerging PV during 2013 to 2022. This work proposes three test methods in detailed specifications to guideline including current-voltage (I-V), spectrum response (SR) and durability. Based on these released standards, in order to determine its performance accurately and inspect the product’s defect or weakness in early stage. Through these standardizations, some comparability and quality estimations are given, which are helpful to alleviate the performances of emerging PV and influence the relevant reliability aspect in a long-term perspective.

  Preview abstract

Energy harvesting from the indoor/outdoor environment using PV has grown substantially. We have taken the first steps towards establishing such a consensus by performing an interlab comparison of measurements of a photovoltaic solar cell under three distinct low illumination reporting conditions. In this bilateral comparison, each laboratory uses a different technique for reporting the performance parameters of the cell under a fixed set of agreed upon illumination conditions. Our results good agreements under some reporting conditions and divergent results under another. Yet, first steps have been taken towards understanding the challenges of establishing a universally acceptable measurement.

  Preview abstract

The effects of the irradiance, the ambient temperature, the relative humidity on the photoelectric conversion efficiency of the solar panel were investigated. The experimental results in the outdoor and the indoor measurements showed that the irradiance has the highly positive correlation with the photoelectric conversion efficiency (PEC) of the solar panel within the irradiance range of 30-90 mW/cm2. Meanwhile, the ambient temperature and the absolute humidity have the highly negative correlation with the PEC. When the ambient temperature is controlled as a constant value, the relative humidity then has the highly negative correlation with the PEC.

  Preview abstract

The MoOX thin films have been successfully fabricated by PE-ALD technique with Mo(CO)6 as the precursor. The physical and electrical properties as functions of film thickness and plasma power are studied. The crystalline belongs to monoclinic b-MoO3 phase. We found that MoOX films prepared are semiconductor n-type conducting materials. The carrier concentration increases with increasing film thickness, but slightly decreases with increasing the plasma power. The formation of oxygen vacancies during ALD process, which induce n-type conductivity may play an important role in current behavior.

  Preview abstract

The measured I-V hysteresis is complicated by the vast array of different materials, lighting sources, and device architectures. In our study, We also have compared some type PV with the latter cells that exhibited promising power conversion efficiency and no hysteresis behavior under an indoor lighting simulator. We defined a performance ratio to compare indoor lighting and solar and the results will be shown different performance trends for the different types of PV in indoor/outdoor, which depends on the device. That will be shown what’s the type of PV that has energy harvesting for the indoor lighting measurement system.

  Preview abstract

In this experiment, sapphire is used as the substrate and Gallium Nitride is used as the buffer layer, and Gallium Oxide is grown by Hydride Vapor Phase Epitaxy. The gas is mixed to grow Gallium Oxide by the showerhead. The crystal quality is optimized by changing the experimental conditions. Detailed analysis of thin films, including crystal quality, surface morphology, electrical and optical properties.

  Preview abstract

To improve the environmental stability, we selected high power impulse magnetron sputtering, this system is expected to increase the high packing density of silver mirror. The resultant silver mirror was characterized through the reflectance spectrometer, reflected-type optical microscope and scanning electron microscope. The experimental results show that the reflectance of silver mirror between the wavelength range of 450-850 nm was larger than 98%. After 24-hour high-temperature and high-humidity storage test, the reflectance of silver mirror between this same wavelength range was larger than 97%.

  Preview abstract

This paper investigates the photocatalytic properties of CZO films by varying the process parameters using pulsed laser deposition (PLD) on C-surface sapphire substrates with a laser wavelength of 266 nm, pulse width <10 ns, and pulse frequency of 10 Hz. By varying the copper doping of ZnO, the experimental results confirmed that the CZO films prepared with the ratio of Cu0.03Zn0.97O had the best degradation degree for photodegradation experiments.

  Preview abstract

Solar energy-driven hydrogen generation from water is crucial to meet the requirements for reducing greenhouse gas emissions. Copper oxide semiconductor thin films were prepared by electrodeposition, and thermal oxidation at different temperatures was applied to fabricate heterostructured thin films, demonstrating higher photocurrent than monolayered thin films due to better electron-hole separation and higher carrier density.

  Preview abstract

A high-entropy oxide (HEO) was fabricated to apply for a high-performance supercapacitor. Thin-film supercapacitors were prepared using five cations (Cu, Ni, Co, Fe, and Cr) via the sol-gel spin coating method, exhibiting enhanced supercapacitor performance compared to CuO thin films.

  Preview abstract