Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology II
Friday, Dec. 2, 2022  15:15-17:00
Presider: Chih-Jen Yu、Hsi-Chao Chen
Room: 2F A204
15:15 - 15:30 Award Candidate (Paper Competition)
Manuscript ID.  0058
Paper No.  2022-FRI-S0802-O001
Ting-Chun Chang Development and Investigated Characteristics of Integrated Perovskite Solar Cells Power System
Ting-Chun Chang, Yu-Cheng Lin, Chen-Yi Liao, Guan-Syun Chen, Hsin-Ying Lee, National Cheng Kung University (Taiwan); Ching-Ting Lee, National Cheng Kung University (Taiwan), Yuan Ze University (Taiwan)

In this work, a self-powered integrated energy storage system constructed by perovskite solar cells and supercapacitors had been developed. The device was charged to 0.76 V in 40.6 s under AM1.5G solar simulator illumination. Besides, the overall conversion
efficiency of the device was 7.33 %.

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15:30 - 15:45 Award Candidate (Paper Competition)
Manuscript ID.  0483
Paper No.  2022-FRI-S0802-O002
Cheng-Wei Hung Structural and optical properties of a-SiOx:H/a-SiOy:H superlattices
Yeu-Long Jiang, Yang-Zhan Lin, Cheng-Wei Hung, National Chung Hsing University (Taiwan)

The pulse-wave modulation plasma with fixed CO2/SiH4 gas flow ratio and changed RF power were used to separately deposit high energy gap (Eg) barrier layer (B) (a-SiOx:H) thin film, low Eg well layer (W) (a-SiOy:H) thin film and B/W superlattice (a-SiOx:H/a-SiOy:H) film. The structural and optical properties of B, W thin films and B/W superlattice thin films were investigated.

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15:45 - 16:00 Award Candidate (Paper Competition)
Manuscript ID.  0694
Paper No.  2022-FRI-S0802-O003
Min Yang Lu Effect of Argon Flow Rate on Optical and Mechanical Properties of Vanadium Oxide Thin Films
Min Yang Lu, Chuen-Lin Tien, Feng Chia University (Taiwan)

Vanadium oxide thin films were deposited on silicon and glass substrates using an electron gun evaporation and ion-beam assistance deposition. The optical and mechanical properties of vanadium oxide thin films prepared by different argon flow rates were discussed. The results show that the compressive residual stress of vanadium oxide film decreases with the increase of argon flow rate. In addition, the root-mean-square surface roughness of the vanadium oxide films gradually increased with the increase of the argon flow rate.

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16:00 - 16:15 Award Candidate (Paper Competition)
Manuscript ID.  0191
Paper No.  2022-FRI-S0802-O004
Hao-Qian Li The van der Waals Epitaxy of Copper Thin Films on Molybdenum Disulfide Surfaces with Low Resistivity
Hao-Qian Li, National Yang Ming Chiao Tung University (Taiwan), Research Center for Applied Sciences (Taiwan); Che-Jia Chang, Research Center for Applied Sciences (Taiwan), National Taiwan University (Taiwan); Po-Tsung Lee, National Yang Ming Chiao Tung University (Taiwan); Shih-Yen Lin, Research Center for Applied Sciences (Taiwan), National Taiwan University (Taiwan)

Thin copper film (15 nm) was deposited on a bi-layer MoS2 surface by using the electron beam deposition. With the assist of the van der Waals epitaxial growth mode on 2D material surfaces, the Cu thin film exhibits preferential planar growth at room temperature, which will lead to the formation of polycrystalline and continuous Cu thin films on MoS2 surfaces. Compared with the Cu film deposited on SiO2 surfaces, a significant low resistivity 4.71 μΩ-cm is obtained on MoS2 surfaces. The planar growth of Cu on 2D material surfaces will lead to the practical applications of backend metal interconnects.

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16:15 - 16:30 Award Candidate (Paper Competition)
Manuscript ID.  0546
Paper No.  2022-FRI-S0802-O005
I-Chun Wang High-Efficiency Silicon Heterojunction Solar Cells with Inverse Pyramidal Surface Textures
I-Chun Wang, Peichen Yu, Tong-Ke Lin, Electro-Optical Engineering (Taiwan); Shih-Wei Chen, Taiwan Semiconductor Research Institute (Taiwan)

In order to improve the efficiency of heterojunction solar cells, we try to increase the light absorption ability of the element by reducing the reflectivity of the light entering the substrate. We simulate and design an inverted pyramidal structure texture with a period of 1μm, an opening size of 900nm, and a vertical depth of 620nm. And we use this structure with the HIT element. Preliminary results show that the inverse pyramid achieves a pseudo power conversion efficiency (pη) of 12.4% and a SunsVoc of 548mV.

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16:30 - 16:45 Award Candidate (Paper Competition)
Manuscript ID.  0625
Paper No.  2022-FRI-S0802-O006
Jian-Yu Li Growth Characteristics of sp2 Bonded Boron Nitride Thin Films on Silicon by Low-Pressure Chemical Vapor Deposition
Jian-Yu Li, Zhong-Jun Jiang, Sheng-Hui Chen, National Central University (Taiwan)

The sp2 bonded boron nitride film has excellent thermal conductivity and insulating properties. In this study, sp2 bonded boron nitride films were grown on silicon (111) substrates on Low-Pressure Chemical Vapor Deposition system with ammonia borane as the precursor. Raman spectrometer and spectrometer were used to measure and analyze sp2 bonded boron nitride films at different distance from the precursor, and to analyze the film quality and growth characteristics.

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16:45 - 17:00
Manuscript ID.  0512
Paper No.  2022-FRI-S0802-O007
Chun-Hao Hsieh Optimization of Optical and Electrical Properties of Perovskite/Silicon Tandem Solar Cell Structure
Chun-Hao Hsieh, Jun-Yu Huang, Yuh-Renn Wu, National Taiwan University (Taiwan)

In this research, we use 2D RCWA and 2D-finite-element method Poisson and drift-diffusion solver to simulate the optical and electrical properties of perovskite/silicon tandem solar cells(TSCs), respectively, to find the optimal textured structure and power conversion
efficiency of TSCs. Compared with the planar structure, the texture structure can reduce the reflected photocurrent from 4.605mA/cm^2 to 1.984mA/cm^2. And the matched photocurrent of the top cell and the bottom cell will increase from 18.04 mA/cm^2 to 20.27 mA/cm^2. Indicates that the texture structure can effectively improve Jsc by reducing the reflected photocurrent. The power conversion efficiency(PCE) can improve from 21.47% to 28.64%.

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