Session Index

By using graphene as the channel and MoS2 as the absorption layer, high responsivity values can be observed from the MoS2/graphene bottom-gate photo-transistors. Compared with the standalone mono-layer MoS2 photo-transistor, five orders of magnitude enhancement in the responsivity value is observed for the MoS2/graphene device. The results have demonstrated that besides the reduction in the contact resistance at the electrode/2D material interface, the easy carrier transport between 2D material layers of MoS2 and graphene is also the main mechanism responsible for the high responsivity of the MoS2/graphene photo-transistor.

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The quality of monocrystalline germanium thin film has been influenced by bias voltage in this research. XRD and Raman were used to measure the crystal intensity and FWHM. AFM and SEM were used to measure the film quality. The bias voltage made good impact within a certain range.

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InGaN micro light-emitting diode (LED) with a current confinement structure and a bottom porous-GaN distributed Bragg reflector (DBRs) has been demonstrated. The aperture emission regions were observed by forming the lateral oxidized GaOx layer surrounding the mesa region. Two micro-LED structure was lighting through the interconnected metal on the insulated GaOx layer. The directional emission properties of the InGaN micro-LEDs were observed by forming the resonant-cavity structure and the current-confinement aperture region.

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In this study, plasma-assisted atomic layer deposition method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma at 60ºC. The measurae crystallization by XRD, from 2556.09 to 1.2 when the inhibitor layer is added to the film. The surface of the film measurae by AFM, roughness decreases from 1.25 nm to 0.434 nm. lasts 56 hours when tested at 85°C and 85% humidity; however add the inhibitory layer has a lifespan of around 352 hours.

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The slope of merit function resolved the accuracy of stopping criteria for broadband optical monitoring by plasma-assisted reactive magnetron sputtering. A fourteenth layers bandpass filter was used to verify the proposed method in this system. The method used the slope of merit function as a criterion for terminating deposition to control each layer's optical thickness.

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Industry uses Metal-organic Chemical Vapor Deposition and Molecular Beam Epitaxy to epitaxial Gallium Nitride thin films, but these two methods used more than 1000℃.Considering the coefficient of thermal expansion will lead to substrates produce cracks and warpage, moreover MOCVD and MBE used toxic gases and low depositing rate. Therefore, we used sputter and Ga target avoid using toxic gases. By High Power Impulse Magnetron Sputtering increasing deposition rate and providing high energy density plasma broken atoms, which are participating in the reaction. Grown GaN on Silicon substrate in 500℃ change On time, Duty cycle, gas flow and bias voltage.

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This work demonstrates a design strategy to improve the ideality factor of the fully room-temperature-fabricated SnOx-based p-n junction diodes. Despite its relatively good rectification, this diode exhibits an ideality factor of 22.3, which deviates considerably from the ideal diode. By correlating the optical and electrical properties of the films resulting from Hall and absorption measurements with numerical drift-diffusion simulations, we find that the poor ideality factor corresponds to the presence of an intermediate-phase layer between the p-type and n-type layers. We show that reducing the thickness of the interface layer is able to lower the ideality factor to 3.6.

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In this study, tin dioxide (SnO2) thin film and multilayer anti-reflection thin films were coated on D-shaped multimode fiber to fabricate a high-sensitivity thin-film-based optical fiber pressure sensor. This pressure sensor is used to measure the pressure of weights of different masses. When the pressure increases, the coupling conditions change and result in the loss mode resonance (LMR) wavelength shift. Finally, we use this wavelength drift mechanism to obtain the sensitivity of fiber optic pressure sensor. The sensitivity of 0.05 nm/g is achieved.

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This paper presented a new thin film thickness measurement platform based on optical interference phenomena on thin films. A V-shaped structure and a miniature spectrometer are used to reduce the size of the measurement platform. The thickness of the wafer coated with photoresist was measured separately using the ellipsometer and the measurement platform developed in this study, and the error of the measurement results was about 3.45%.

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