Session Index

S8. Thin Film and Photovoltaic Technology

Thin Film and Photovoltaic Technology IV
Saturday, Dec. 3, 2022  13:00-15:15
Presider: Chuen-Lin Tien、Bo-Huei Liao
Room: 2F A204
13:00 - 13:15 Award Candidate (Paper Competition)
Manuscript ID.  0199
Paper No.  2022-SAT-S0804-O001
Rung-Jin Chang Carrier Transport between 2D Material Layers: Photo-detector Applications of 2D Material Hetero-structures
Rung-Jin Chang, National Yang Ming Chiao Tung University (Taiwan), Academia Sinica (Taiwan); Po-Cheng Tsai, National Taiwan University (Taiwan), Academia Sinica (Taiwan); Po-Tsung Lee, National Yang Ming Chiao Tung University (Taiwan); Shih-Yen Lin, Academia Sinica (Taiwan)

By using graphene as the channel and MoS2 as the absorption layer, high responsivity values can be observed from the MoS2/graphene bottom-gate photo-transistors. Compared with the standalone mono-layer MoS2 photo-transistor, five orders of magnitude enhancement in the responsivity value is observed for the MoS2/graphene device. The results have demonstrated that besides the reduction in the contact resistance at the electrode/2D material interface, the easy carrier transport between 2D material layers of MoS2 and graphene is also the main mechanism responsible for the high responsivity of the MoS2/graphene photo-transistor.

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13:15 - 13:30 Award Candidate (Paper Competition)
Manuscript ID.  0633
Paper No.  2022-SAT-S0804-O002
Liang-Ting Wu Effect of Bias voltage on the monocrystalline germanium film by using pulsed magnetron sputtering deposition
Liang-Ting Wu, Yu-Ci Li, Sheng-Hui Chen, National Central University (Taiwan)

The quality of monocrystalline germanium thin film has been influenced by bias voltage in this research. XRD and Raman were used to measure the crystal intensity and FWHM. AFM and SEM were used to measure the film quality. The bias voltage made good impact within a certain range.

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13:30 - 13:45 Award Candidate (Paper Competition)
Manuscript ID.  0636
Paper No.  2022-SAT-S0804-O003
Yi-Sian Hsieh Optical properties of micro-scale InGaN devices with resonant cavity and GaOx current confinement structures
Yi-Sian Hsieh, National Chung Hsing University (Taiwan)

InGaN micro light-emitting diode (LED) with a current confinement structure and a bottom porous-GaN distributed Bragg reflector (DBRs) has been demonstrated. The aperture emission regions were observed by forming the lateral oxidized GaOx layer surrounding the mesa region. Two micro-LED structure was lighting through the interconnected metal on the insulated GaOx layer. The directional emission properties of the InGaN micro-LEDs were observed by forming the resonant-cavity structure and the current-confinement aperture region.

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13:45 - 14:00 Award Candidate (Paper Competition)
Manuscript ID.  0779
Paper No.  2022-SAT-S0804-O004
Jia-Lun Ho Inhibition of Crack on Plastic Substrate by Nanolaminates Layer Deposition During Plasma Enhanced Atomic Layer Deposition
Jia-Lun Ho, Chen-Fu Wang, Duy Thanh Cu, National Central University (Taiwan); Wen-Hao Cho, Taiwan Instrument Research Institute (Taiwan); Chen-Cheng Kuo, National Central University (Taiwan)

In this study, plasma-assisted atomic layer deposition method is used to deposit anti-reflection film on PMMA substrate. The oxidation method of oxygen mixed with argon plasma at 60ºC. The measurae crystallization by XRD, from 2556.09 to 1.2 when the inhibitor layer is added to the film. The surface of the film measurae by AFM, roughness decreases from 1.25 nm to 0.434 nm. lasts 56 hours when tested at 85°C and 85% humidity; however add the inhibitory layer has a lifespan of around 352 hours.

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14:00 - 14:15 Award Candidate (Paper Competition)
Manuscript ID.  0543
Paper No.  2022-SAT-S0804-O005
Shih-Kai Hsu The use of the slope of merit function algorithm in finding the stopping criteria of spectrum in broadband optical monitoring system
Shih-Kai Hsu, Hong-Lin Zhuo, Chien-Jen Tang, Feng Chia University (Taiwan)

The slope of merit function resolved the accuracy of stopping criteria for broadband optical monitoring by plasma-assisted reactive magnetron sputtering. A fourteenth layers bandpass filter was used to verify the proposed method in this system. The method used the slope of merit function as a criterion for terminating deposition to control each layer's optical thickness.

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14:15 - 14:30 Award Candidate (Paper Competition)
Manuscript ID.  0630
Paper No.  2022-SAT-S0804-O006
Hung-Sheng Liu Epitaxy growth low temperature gallium nitride on silicon substrate by Using the Pulsed Magnetron Sputtering Deposition
Hung-Sheng Liu, Zhi-Guang Chen, Sheng-Hui Chen, National Central University (Taiwan)

Industry uses Metal-organic Chemical Vapor Deposition and Molecular Beam Epitaxy to epitaxial Gallium Nitride thin films, but these two methods used more than 1000℃.Considering the coefficient of thermal expansion will lead to substrates produce cracks and warpage, moreover MOCVD and MBE used toxic gases and low depositing rate. Therefore, we used sputter and Ga target avoid using toxic gases. By High Power Impulse Magnetron Sputtering increasing deposition rate and providing high energy density plasma broken atoms, which are participating in the reaction. Grown GaN on Silicon substrate in 500℃ change On time, Duty cycle, gas flow and bias voltage.

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14:30 - 14:45 Award Candidate (Paper Competition)
Manuscript ID.  0718
Paper No.  2022-SAT-S0804-O007
Mochamad Januar Design Strategy to Improve the Ideality Factor of SnOx p-n Junction Diodes
Mochamad Januar, Chang Gung University (Taiwan); Suhendro Purbo Prakoso, National Taiwan University of Science and Technology (Taiwan); Jang-Hsing Hsieh, National Yang Ming Chiao Tung University (Taiwan), Ming Chi University of Technology (Taiwan); Kou-Chen Liu, Chang Gung University (Taiwan), Ming Chi University of Technology (Taiwan)

This work demonstrates a design strategy to improve the ideality factor of the fully room-temperature-fabricated SnOx-based p-n junction diodes. Despite its relatively good rectification, this diode exhibits an ideality factor of 22.3, which deviates considerably from the ideal diode. By correlating the optical and electrical properties of the films resulting from Hall and absorption measurements with numerical drift-diffusion simulations, we find that the poor ideality factor corresponds to the presence of an intermediate-phase layer between the p-type and n-type layers. We show that reducing the thickness of the interface layer is able to lower the ideality factor to 3.6.

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14:45 - 15:00
Manuscript ID.  0848
Paper No.  2022-SAT-S0804-O008
Chen-Yuan Huang Optical Pressure Sensor Fabricated by D-Shaped Fiber Combined with Coating Technology
Chen-Yuan Huang, National Central University (Taiwan), Feng Chia University (Taiwan); Chuen-Lin Tien, Feng Chia University (Taiwan); Wen-Shing Sun, National Central University (Taiwan)

In this study, tin dioxide (SnO2) thin film and multilayer anti-reflection thin films were coated on D-shaped multimode fiber to fabricate a high-sensitivity thin-film-based optical fiber pressure sensor. This pressure sensor is used to measure the pressure of weights of different masses. When the pressure increases, the coupling conditions change and result in the loss mode resonance (LMR) wavelength shift. Finally, we use this wavelength drift mechanism to obtain the sensitivity of fiber optic pressure sensor. The sensitivity of 0.05 nm/g is achieved.

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15:00 - 15:15
Manuscript ID.  0013
Paper No.  2022-SAT-S0804-O009
Ciao-Ming Tsai Micro Thin Film Thickness Measurement Platform Based on Interference Spectrum
Ciao-Ming Tsai, National Tsing Hua University (Taiwan); Wei-Yi Kong, Wei-Huai Chiu, National Taiwan University of Science and Technology (Taiwan); Weileun Fang, National Tsing Hua University (Taiwan); Cheng-Hao Ko, National Taiwan University of Science and Technology (Taiwan)

This paper presented a new thin film thickness measurement platform based on optical interference phenomena on thin films. A V-shaped structure and a miniature spectrometer are used to reduce the size of the measurement platform. The thickness of the wafer coated with photoresist was measured separately using the ellipsometer and the measurement platform developed in this study, and the error of the measurement results was about 3.45%.

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