Session Index

The manganese (Mn)-doped NiOx layer was prepared by sol-gel process to serve as the hole
transport layer (HTL) in inverted perovskite solar cells (PSCs). The perovskite film deposited on the
Mn-doped NiOx exhibited lower recombination and shorter carrier lifetime. The device based on 0.5
mol% Mn-doped NiOx HTL displayed the best power conversion efficiency (PCE) of 17.35% and a
high fill factor (FF) of 81%, which were significantly higher than the one using pristine NiOx HTL.
Moreover, the device retained 70% of its initial efficiency after 35 days storage under a halogen lamps
matrix exposure.


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The performance of the metal halide-based perovskite is increasing at a rapid rate and
multi-junction solar cells have attracted immense attention in recent years. In this paper, we have
proposed a new technique (DS-SET) for the formation of mixed halide-based tunable bandgap
MAPbIxBr3-x perovskite thin film. The thin film characteristics show that by optimizing the SET
time, we can achieve a PCE (%) of 11.43% and Eg of 1.96 eV. Furthermore, the bandgap can be
tuned by changing in the SET time, which enables tandem solar cells with an efficiency above 26%.

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In this work, gold was obliquely deposited upon the ridges of a subwavelength grating made of PDAP polymer. The morphology of gold depends on the morphology of deposited gold film. The TE polarized reflectance increases with wavelength and exhibits the property of a wire grid polarizer. The abnormal TM polarized reflectance peak was measured and found to be varied with the morphology of gold. The magnetic field reversal within the ridges was demonstrated with finite-difference time-domain simulation.


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We discuss the effect of the perovskite film in different doping ratios of the cesium bromide (CsBr) and methylammonium bromide (MABr). Finally, the solar cell prepared with Cs0.15FA0.81MA0.04PbI2.86Br0.14 as the active layer has the best photovoltaic characteristics, and its PCE reaches 18.7%.

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The WO3 doped TiO2 all-solid-state electrochromic devices were fabricated by co-sputtering with DC and RF plasma sources. The power of WO3 is 100W RF, then the doping power of TiO2 change from 10 to 50W by RF & DC. However, the transmittance variation (ΔT) of device can reach 68.3%@550nm.

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Home-made phase-shifting interferometer constructed a measurement system that can quickly and accurately analyze the residual stress of silicon substrate. The wide-bandgap Semiconductor of AlN deposited on silicon substrate with high-energy magnetron sputtering and realize the relative principal anisotropic stress analysis of the axial and shear stresses by phase-shifting interferometer.

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Light-addressable potentiometric sensor (LAPS) had been proven for pH sensing and 2D chemical imaging. Many semiconductor layers had been studied. Thin film semiconductor on glass can be a good candidate with simple process and industry compatibility. The first study of the illumination stability and thickness of semiconductor is proposed for the IGZO-based LAPS. Thinner IGZO layer can have a better stability with hysteresis width and drift of -12.8 mV and 0.37 mV/h, respectively.

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The optical properties, thickness, and water contact angle of surface and interface layers between the polycarbonate (PC) and sputtered Ta2O5 films were investigated with spectrophotometer, spectroscopic ellipsometer, and contact angle measurement system, respectively. The surface of PC had been pretreated with low pressure oxygen plasma.

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The optical properties and thickness of molybdenum trioxide thin films prepared by reactive DC magnetron sputtering were investigated with spectrophotometer and spectroscopic ellipsometer. The films were deposited under different O2/Ar flow rate ratios.

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Compare (Ag, Cu)2ZnSnSe4(ACZTSe) thin film with Cu2ZnSnSe4 (CZTSe) thin film,the variety of thin film of absorber layer by Ag-doping is investigated. After Ag is doped into Cu2ZnSnSe4 thin film, the grain becomes compact, and the band gap of the absorber layer increases from 0.99 to 1. 06eV.

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The Ga2O3 film was prepared on quartz and Si substrate respectively by spray pyrolysis with following high temperature annealing in atmosphere. The optical bandgap extracted from Tauc plot for quartz/Ga2O3 samples shows an increase-stabilized character at 4.7eV while anneal temperature excess 800oC. The In/p-Si/Ga2O3/Ag MOS diodes were fabricated for the annealed p-Si/Ga2O3 structure with following In and Ag contacts formation. With the flat band voltage shift and hysteresis loop characterized in CV analysis, trap charge in p-Si/Ga2O3 decreases after 600oC annealing process. The effect of high temperature annealing to the diode was discussed.

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This paper aims to summary the standardization research of pivot SEMI standards about emerging PV during 2013 to 2022. This work proposes three test methods in detailed specifications to guideline including current-voltage (I-V), spectrum response (SR) and durability. Based on these released standards, in order to determine its performance accurately and inspect the product’s defect or weakness in early stage. Through these standardizations, some comparability and quality estimations are given, which are helpful to alleviate the performances of emerging PV and influence the relevant reliability aspect in a long-term perspective.

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Energy harvesting from the indoor/outdoor environment using PV has grown substantially. We have taken the first steps towards establishing such a consensus by performing an interlab comparison of measurements of a photovoltaic solar cell under three distinct low illumination reporting conditions. In this bilateral comparison, each laboratory uses a different technique for reporting the performance parameters of the cell under a fixed set of agreed upon illumination conditions. Our results good agreements under some reporting conditions and divergent results under another. Yet, first steps have been taken towards understanding the challenges of establishing a universally acceptable measurement.

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The effects of the irradiance, the ambient temperature, the relative humidity on the photoelectric conversion efficiency of the solar panel were investigated. The experimental results in the outdoor and the indoor measurements showed that the irradiance has the highly positive correlation with the photoelectric conversion efficiency (PEC) of the solar panel within the irradiance range of 30-90 mW/cm2. Meanwhile, the ambient temperature and the absolute humidity have the highly negative correlation with the PEC. When the ambient temperature is controlled as a constant value, the relative humidity then has the highly negative correlation with the PEC.

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The MoOX thin films have been successfully fabricated by PE-ALD technique with Mo(CO)6 as the precursor. The physical and electrical properties as functions of film thickness and plasma power are studied. The crystalline belongs to monoclinic b-MoO3 phase. We found that MoOX films prepared are semiconductor n-type conducting materials. The carrier concentration increases with increasing film thickness, but slightly decreases with increasing the plasma power. The formation of oxygen vacancies during ALD process, which induce n-type conductivity may play an important role in current behavior.

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The measured I-V hysteresis is complicated by the vast array of different materials, lighting sources, and device architectures. In our study, We also have compared some type PV with the latter cells that exhibited promising power conversion efficiency and no hysteresis behavior under an indoor lighting simulator. We defined a performance ratio to compare indoor lighting and solar and the results will be shown different performance trends for the different types of PV in indoor/outdoor, which depends on the device. That will be shown what’s the type of PV that has energy harvesting for the indoor lighting measurement system.

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In this experiment, sapphire is used as the substrate and Gallium Nitride is used as the buffer layer, and Gallium Oxide is grown by Hydride Vapor Phase Epitaxy. The gas is mixed to grow Gallium Oxide by the showerhead. The crystal quality is optimized by changing the experimental conditions. Detailed analysis of thin films, including crystal quality, surface morphology, electrical and optical properties.

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To improve the environmental stability, we selected high power impulse magnetron sputtering, this system is expected to increase the high packing density of silver mirror. The resultant silver mirror was characterized through the reflectance spectrometer, reflected-type optical microscope and scanning electron microscope. The experimental results show that the reflectance of silver mirror between the wavelength range of 450-850 nm was larger than 98%. After 24-hour high-temperature and high-humidity storage test, the reflectance of silver mirror between this same wavelength range was larger than 97%.

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This paper investigates the photocatalytic properties of CZO films by varying the process parameters using pulsed laser deposition (PLD) on C-surface sapphire substrates with a laser wavelength of 266 nm, pulse width <10 ns, and pulse frequency of 10 Hz. By varying the copper doping of ZnO, the experimental results confirmed that the CZO films prepared with the ratio of Cu0.03Zn0.97O had the best degradation degree for photodegradation experiments.

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Solar energy-driven hydrogen generation from water is crucial to meet the requirements for reducing greenhouse gas emissions. Copper oxide semiconductor thin films were prepared by electrodeposition, and thermal oxidation at different temperatures was applied to fabricate heterostructured thin films, demonstrating higher photocurrent than monolayered thin films due to better electron-hole separation and higher carrier density.

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A high-entropy oxide (HEO) was fabricated to apply for a high-performance supercapacitor. Thin-film supercapacitors were prepared using five cations (Cu, Ni, Co, Fe, and Cr) via the sol-gel spin coating method, exhibiting enhanced supercapacitor performance compared to CuO thin films.

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