Session Index

This study takes LMR (Lossy Mode Resonance) spectral measurement as an example, and the measurement uncertainty Type A evaluation method is applied to find a better measurement solution to reduce the measurement uncertainty under the same confidence level. We use the glass coated with ITO (Indium Tin Oxide) film as the LMR sensor to observe the average standard deviation of the LMR resonance wavelength for the measurement system composed of different broadband light sources and different spectrometers. The measurement uncertainty was analyzed, and finally, a suggestion is proposed to reduce measurement uncertainty.

  Preview abstract

An open-cavity Fabry-Pérot interferometer (FPI) sensor formed by splicing a hollow-core fiber with a triangularly ground SMF is proposed. Very high gas pressure difference sensing sensitivity of 28.79 pm/psi can be realized. The proposed sensor also shows good repeatability and low temperature response of 0.2 pm/℃.

  Preview abstract

Circulating tumor DNA of lung cancer was detected by a surface-enhanced Raman spectroscopy (SERS) biochip built with InGaN quantum wells (QWs). The nitride QWs were grown by metal-organic chemical vapor deposition. It is found that the QWs can enhance the sensitivity and reliability of DNA SERS signals. The result is due to abundant surface charges provided by the QWs.

  Preview abstract

Recently, many researches indicate that there are plenty of the advantages of amorphous oxide semiconductors (AOSs), including low-temperature large-area deposition, high electron mobility, and mechanical flexibility. Meanwhile, several excellent review papers represent AOSs are a reliable and practical material. In these papers, IGZO has a lot of attention, but gallium which is rare makes IGZO extremely expensive. Therefore, we use InWZnO instead of IGZO in our experiments and successfully complete to make switches and Resistive Random Access Memory (RRAM). The major of this review is to use InWZnO on optical sensor and get good result.

  Preview abstract

The characterization of MnPS3 and CdPS3 have been worked in this report, including the structural and optical properties. Both materials were grown by CVT method and the monoclinic structure was investigated by XRD spectra and TEM. Band-edge excitons of few-layer MnPS3 and CdPS3 were characterized via micro-thermal-modulated reflectance (μTR) and transmittance measurements from 20 to 300K. As resulted, the ionic bonding of MPX3 family contributes to the large bandgap and high sensitivity behavior, representing the hugely potential application in photodetector, optoelectronics and photo(electro)chemical catalysis.

  Preview abstract

This research shows a novel approach using a multiple-layers graphene-based SPR sensor for rapid IgM detection. Measuring the principal fast axis angle of LB (α) of human IgM antibodies in concentrations of 0–250 ng/mL could demonstrate the validity of this sensor. Results show that the resolution of the proposed device is approximately 10 ng/mL and has a result of about three minutes, concluding that selectivity and sensitivity for the detection of IgM antibodies.

  Preview abstract

We show that a plain self-mixing interferometer made around a commercial, low-cost laser diode, achieves a sensitivity to small vibrations of 6.5 pm/√Hz, that on a measurement bandwidth of 10 kHz corresponds to a minimum detectable amplitude of 0.65 nm (rms value at SNR=1).

  Preview abstract

The guided modes of dual-tube antiresonant hollow-core fibers with different core diameters, thicknesses, and numbers of capillaries for capillary cladding designs by simulation are presented. The proper number of dual-tube capillaries enhances the fundamental mode power, and the 8-capillary cladding of antiresonant hollow-core fiber has the red-shifted as a function of the core diameter.

  Preview abstract

Here we demonstrated the fabrication of an Al/SiO2/Si MIS device and its characterization of photo current generation. Responsivity as high as 1.4 A/W can be achieved at UV (200 nm~300 nm) and IR (800 nm ~ 900 nm) and with high contrast against visible light. In addition, the photo current decreases linearly as the increasing of the thickness of the SiO2 insulating layer. A current drifting mechanism is suggested to explain the result of the photo current characteristics.

  Preview abstract